SF31G-SF38G Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – DO-27 Plastic-Encapsulate Diodes

SF31G THRU SF38G
DO-27 Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●Io
3.0A
●VRRM
50V-600V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● SF3XG
X:From 1 to 8
DO-27
HD ZC84
Item
Symbol Unit
Conditions
SF3
1G 2G 3G 4G 5G 6G 7G 8G
Repetitive Peak Reverse Voltage VRRM
V
50 100 150 200 300 400 500 600
Average Forward Current
I_F(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=75℃
3.0
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_FSM
T_J
T_STG
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
℃
℃
125
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
Thermal
Resistance(Typical)
Symbol Unit
V_FM
V
I_RRM1
μA
I_RRM2
trr
ns
R_θJ-A
℃/W
Test Condition
1G
I_FM=3.0A
V_RM=V_RRM
Ta=25℃
Ta=125℃
I_F=0.5A I_R=1A
I_RR=0.25A
Between junction and ambient
2G 3G
0.95
SF3
4G 5G 6G
1.3
5
150
35
30
7G 8G
1.7
Typical junction capacitance
Cj
pF
Measured at 1MHZ and Applied
Reverse Voltage of 4.0 V.D.C.
80
70
High Diode Semiconductor
1