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| S9015 Datasheet, PDF (1/4 Pages) Weitron Technology – PNP General Purpose Transistors | |||
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S9 015
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
â Complementary to S9014
SOT- 23
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-50
Collector-Emitter Voltage
-45
Emitter-Base Voltage
-5
Collector Current
-100
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
C
B
E
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= -100μA, IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO IC = -0.1mA, IB=0
-45
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
-5
Collector cut-off current
ICBO
VCB=-50 V, IE=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE=-5V, IC= -1mA
200
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA, IB= -10mA
Base-emitter saturation voltage
VBE(sat)
IC=-100mA, IB=-10mA
Transition frequency
fT
VCE=-5V, IC= -10mA
f=30MHz
150
Typ
Max Unit
V
V
V
-0.1
μA
-0.1
μA
1000
-0.3
V
-1
V
MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
L
200-450
M6
H
450-1000
M7
High Diode Semiconductor
1
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