S9013W-SOT-323 Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-323 Plastic-Encapsulate Transistors

S9013W
SOT-323 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● _{High Collector Current}
● Excellent H_FE Linearity
SOT- 3 23
C
E
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
40
Collector-Emitter Voltage
25
Emitter-Base Voltage
5
Collector Current
0.5
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VCE=20V, IB=0
VEB=5V, IC=0
VCE=1V, IC=50mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=6V,IC=20mA , f=30MHz
VCB=6V, IE=0, f=1MHz
B
C
B
E
Min
Typ
Max Unit
40
V
25
V
5
V
100
nA
100
nA
100
nA
120
400
0.6
V
1.2
V
0.7
V
150
MHz
8
pF
CLASSIFICATION OF h_FE
RANK
RANGE
MARKING
L
120–200
H
200–350
J3
J
300–400
High Diode Semiconductor
1