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| S8550-TO-92 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-92 Plastic-Encapsulate Transistors | |||
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S8550
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
HD-TO0.35
Features
â Complimentary to S8050
â Collector current: IC=-0.5A
TO- 9 2
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-40
Collector-Emitter Voltage
-25
Emitter-Base Voltage
-5
Collector Current
-0.5
Collector Power Dissipation
625
Thermal Resistance From Junction To Ambient
416
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
A
mW
â/W
â
â
E BC
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
Parameter
Symbol
Test conditions
Min
Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -100uA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
= IC= -1mA, IB 0
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE== -100uA, IC 0
-5
V
Collector cut-off current
ICBO
VCB== -40V, IE 0
-0.1
uA
Collector cut-off current
Emitter cut-off current
ICEO
V= CE= -20V, IB 0
IEBO
= VEB= - 3V, IC 0
-0.1
uA
-0.1
uA
DC current gain
Collector-emitter saturation voltage
hFE(1)
VCE= -1V, IC= -50mA
85
hFE(2)
VCE= -1V, IC= -500mA
50
VCE(sat)
IC=-500= mA, IB -50mA
400
-0.6
V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=-500= mA, IB -50mA
fT
VCE=- 6V, IC=-20mA,
f =30MHz
150
-1.2
V
MHz
CLASSIFICATION OF hFE
Rank
B
Range
85-160
C
120-200
D
160- 300
D3
300- 400
High Diode Semiconductor
1
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