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| S8550-SOT-23 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors | |||
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S8550
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
â Complimentary to S8050
â Collector Current: IC=-0.5A
SOT- 23
Marking:
â 2TY
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-40
Collector-Emitter Voltage
-25
Emitter-Base Voltage
-5
Collector Current
-500
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
C
B
E
Parameter
Symbol
Test conditions
Min Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
IC = -100μA, IE=0
IC =-1mA, IB=0
IE= -100μA, IC=0
VCB= -40V, IE=0
VCE= -20V, IB=0
VEB= -3V, IC=0
-40
V
-25
V
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
hFE(1)
hFE(2)
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
120
400
50
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.6 V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE
RANK
RANGE
VBE(sat)
fT
IC=-500mA, IB= -50mA
VCE= -6V, IC= -20mA
f=30MHz
L
120-200
H
200-350
-1.2 V
150
MHz
J
300-400
High Diode Semiconductor
1
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