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| S8050 Datasheet, PDF (1/4 Pages) Wing Shing Computer Components – TRANSISTOR (PNP) | |||
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S8050
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
â Complimentary to S8550
â Collector Current: IC=0.5A
SOT- 23
Marking:
â J3Y
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
40
Collector-Emitter Voltage
25
Emitter-Base Voltage
5
Collector Current
500
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
C
B
E
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO = IC=1mA, IB 0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
V= CB=40 V , IE 0
0.1 μA
Collector cut-off current
ICEO
= VCB= 20V , I E 0
0.1 μA
Emitter cut-off current
IEBO
= VEB= 5V , IC 0
0.1 μA
DC current gain
hFE(1)
VCE= 1V, I C= 50mA
120
400
hFE(2)
VCE= 1V, I C= 500mA
50
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
0.6
V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE
RANK
RANGE
VBE(sat)
IC=500 mA, IB= 50mA
VCE= 6V, I C= 20mA
fT
f=30MHz
150
L
120-200
H
200-350
1.2
V
MHz
J
300-400
High Diode Semiconductor
1
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