S8050-TO-92 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-92 Plastic-Encapsulate Transistors

S8050
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
HD-TO0.35
Features
● _{Complimentary to S8550}
● Collector current: I_C=0.5A
TO- 9 2
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
40
Collector-Emitter Voltage
25
Emitter-Base Voltage
5
Collector Current
0.5
Collector Power Dissipation
625
Thermal Resistance From Junction To Ambient
416
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
E BC
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
Test conditions
I_C= 100μA, I_E=0
I_C= 0.1mA, I_B=0
I_E= 100μA, I_C=0
V_CB= 40 V , I_E=0
V_CE= 20 V , I_B=0
V_EB= 5V, I_C=0
V_CE= 1V, I_C= 50mA
V_CE= 1V, I_C= 500mA
I_C=500mA, I_B=50mA
I_C=500mA, I_B=50mA
V_CE= 6V, I_C=20mA
f =30MHz
Min Typ
40
25
5
85
50
150
CLASSIFICATION OF h_FE
Rank
B
Range
85-160
C
120-200
D
160-300
Max Unit
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.6
V
1.2
V
MHz
D3
300-400
High Diode Semiconductor
1