MUR1620-28F-29CT Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-220 Plastic-Encapsulate Diodes

MUR1620(F)CT THRU MUR1660(F)CT _{HD TO84}
TO-220 Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●Io
16A
●VRRM
200V-600V
●High surge current capability
●Glass passivated chip
TO- 220 AB
ITO- 220 AB
Applications
● Rectifier
Marking
● MUR16XX(F)CT
XX ^: From 20 To 60
1
23
PIN 1
PIN 3
1
2
3
PIN 2
CASE
Item
Symbol Unit
Test Conditions
20
Repetitive Peak Reverse Voltage VRRM
V
200
Average Rectified Output Current
I_o
A
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_FSM
T_J
T_STG
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
MUR16-(F)CT
40
60
400
600
16
125
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
20
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery Time
Thermal
Resistance(Typical) (Note1)
V_F
I_RRM1
I_RRM2
Trr
R_θJ-A
V
I_F =8.0A
1.0
Ta =25℃
uA
V _RM=V_RRM
Ta =125℃
ns
I_F=0.5A I_RM=1A
I_RR=0.25A
℃/W
Typical Junction
Capacitance(Note2)
Cj
pF
NOTE1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
NOTE2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
High Diode Semiconductor
MUR16-(F)CT
40
60
1.3
1.7
10
500
50
30
150
1