MSB30M Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – DBF Plastic-Encapsulate Bridge Rectifier

MSB30M
HD DB80
DBF Plastic-Encapsulate Bridge Rectifier
Features
●Io
3A
●VRRM
1000V
DBF
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● _{General purpose 1 phase Bridge}
rectifier applications
Marking
● MB30M
Item
Symbol Unit
Repetitive Peak Reverse
Voltage
V_RRM
V
Average Rectified Output
Current
I_O
A
Surge(Non-
repetitive)Forward
Current
I_FSM
A
Conditions
60Hz sine wave, R-load, Tc=110℃
60H_Z sine wave, 1 cycle, T_j=25℃
Current Squared Time
Storage Temperature
I²t
A²S ^{1ms≤t<8.3ms Tj=25℃，Rating of per}
diode
T_stg
℃
Junction Temperature
T_j
℃
Electrical Characteristics（T_a=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
MSB30M
1000
3
95
33
-55 ~+150
-55 ~+150
Max
Peak Forward Voltage
V_FM
V
I_FM=1.5A, Pulse measurement, Rating of per diode
1.1
Peak Reverse Current
I_{RRM μA} V_RM=V_RRM , Pulse measurement, Rating of per diode
Tj=25℃
Tj=125℃
5
100
R_θJ-A
Between junction and ambient
55
Thermal Resistance
R_θJ-L ℃/W
Between junction and lead
15
R_θJ-C
Between junction and case
10
High Diode Semiconductor
1