MMBTA94 Datasheet, PDF (1/4 Pages) Avic Technology – SOT-23-3L Plastic-Encapsulate Transistors

MMBTA9 4
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● High Breakdown Voltage
SOT- 23
Marking:
● 4D
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-400
Collector-Emitter Voltage
-400
Emitter-Base Voltage
-5
Collector Current
Collector Power Dissipation
-300
350
Thermal Resistance From Junction To Ambient
357
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
Test conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-400V, IE=0
VCE=-400V, IB=0
VEB=-4V, IC=0
VCE=-10V, IC=-10mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-20V,IC=-10mA,
f=30MHz
Min
Typ
Max Unit
-400
V
-400
V
-5
V
-0.1
µA
-5
µA
-0.1
µA
80
300
70
40
40
-0.2
V
-0.3
V
-0.75
V
50
MHz
High Diode Semiconductor
1