MMBTA42 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor

MMBTA4 2
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● _{High breakdown voltage}
● _{Low collector-emitter saturation voltage}
● Complementary to MMBTA92 (PNP)
Marking:
● 1D
SOT- 23
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
300
Collector-Emitter Voltage
300
Emitter-Base Voltage
5
Collector Current
300
Collector Power Dissipation
350
Thermal Resistance From Junction To Ambient
357
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
f_T
I_C= 100μA,I_E=0
I_C= 1mA, I_B=0
I_E= 100μA, I_C=0
V_CB=200V, I_E=0
V_EB= 5V, I_C=0
V_CE= 10V, I_C= 1mA
V_CE= 10V, I_C=10mA
V_CE=10V, I_C=30mA
I_C=20mA, I_B= 2mA
I_C= 20mA, I_B=2mA
V_CE= 20V, I_C= 10mA,
f=30MHz
C
B
E
Min
300
300
5
60
100
60
Max
0.25
0.1
200
0.2
0.9
Unit
V
V
V
μA
μA
V
V
50
MHz
High Diode Semiconductor
1