MMBTA06 Datasheet, PDF (1/4 Pages) Samsung semiconductor – NPN (DRIVER TRANSISTOR)

MMBTA06
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● _{For Switching and Amplifier Applications}
● Complementary Type PNP Transistor MMBTA56
SOT- 23
Marking:
● 1GM
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
80
Collector-Emitter Voltage
80
Emitter-Base Voltage
4
Collector Current
500
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Test conditions
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCB=80V, IE=0
VCE=60V, IB=0
VEB=3V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC=100mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=2V,IC=10mA, f=100MHz
Min
Typ
Max Unit
80
V
80
V
4
V
0.1
µA
0.1
µA
0.1
µA
100
400
100
0.25
V
1.2
V
100
MHz
High Diode Semiconductor
1