MMBTA05 Datasheet, PDF (1/4 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBTA05
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● _{Driver transistor}
SOT- 23
Marking:
● 1H
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
60
Collector-Emitter Voltage
60
Emitter-Base Voltage
4
Collector Current
500
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C= 100μA, I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO I_C= 1mA, I_B=0
60
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA, I_C=0
4
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Collector cut-off current
Collector cut-off current
I_CEO
V_CE=60V, I_B=0
I_EBO
V_EB=3V, I_C=0
DC current gain
h_FE1
V_CE=1V, I_C= 10mA
100
h_FE2
V_CE=1V, I_C= 100mA
100
Collector-emitter saturation voltage
V_CE(sat)
I_C=100mA, I_B=10mA
Base-emitter voltage
Transition frequency
V_BE
V_CE=1V, I_C= 100mA
f_T
V_CE= 2V, I_C=10mA
f=100MHz
100
C
B
E
Typ Max
Unit
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.25
V
1.2
V
MHz
High Diode Semiconductor
1