MMBT589 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP General Purpose Transistor

MMBT589
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● High current surface mount PNP silicon switching transistor for
Load management in portable applications
SOT- 23
Marking:
● ₅₈₉
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-50
Collector-Emitter Voltage
-30
Emitter-Base Voltage
-5
Collector Current
-1
Collector Power Dissipation
310
Thermal Resistance From Junction To Ambient
403
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter Turn-on voltage
Transition frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CES
I_EBO
h_FE1
h_FE2
h_FE3
h_FE4
V_CE(sat)1
V_CE(sat)2
V_CE(sat)3
V_BE(sat)
V_BE(on)
f_T
Cob
Test conditions
I_C=-100μA,I_E=0
I_C=-10mA,I_B=0
I_E=-100μA,I_C=0
V_CB=-30V,I_E=0
V_CES=-30V
V_EB=-4V,I_C=0
V_CE=-2V,I_C=-1mA
V_CE=-2V,I_C=-500mA
V_CE=-2V,I_C=-1A
V_CE=-2V,I_C=-2A
I_C= -500mA, I_B=-50mA
I_C= -1A, I_B=-100mA
I_C= -2A, I_B=-200mA
I_C= -1A, I_B=-100mA
V_CE=-2V, I_C=-1A
V_CE=-5V, I_C=-100mA ,
f =100MHz
f=1MHz
C
B
E
Min Typ Max Unit
-50
V
-30
V
-5
V
-0.1
μA
-0.1
μA
-0.1
μA
100
100
300
80
40
-0.25
V
-0.3
V
-0.65
V
-1.2
V
-1.1
V
100
MHz
15
pF
High Diode Semiconductor
1