MMBT56 Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors

MMBTA56
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● _{General Purpose Amplifier Applications}
SOT- 23
Marking:
● 2GM
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-80
Collector-Emitter Voltage
-80
Emitter-Base Voltage
-4
Collector Current
Collector Power Dissipation
-500
225
Thermal Resistance From Junction To Ambient
555
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
-80
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0
-80
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-4
Collector cut-off current
ICBO
VCB=-80V, IE=0
Collector cut-off current
ICEO
VCE=-60V, IB=0
Emitter-base breakdown voltage
IEBO
VEB=-4V, IC=0
DC current gain
hFE(1) VCE=-1V, IC=-10mA
100
hFE(2) VCE=-1V, IC=-100mA
100
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Base-emitter voltage
VBE
VCE=-1V, IC=-100mA
Transition frequency
fT
VCE=-1V,IC=-100mA, f=100MHz
50
Typ
Max
Unit
V
V
V
-0.1
µA
-0.1
µA
-0.1
µA
400
-0.25
-1.2
V
V
MHz
High Diode Semiconductor
1