MMBT5551 Datasheet, PDF (1/4 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT5551
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● _{Complementary to MMBT5401}
● Ideal for Medium Power Amplification and Switching
SOT- 23
Marking:
● G1
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
180
Collector-Emitter Voltage
160
Emitter-Base Voltage
6
Collector Current
600
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
416
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V_(BR)CBO I_C=100µA, I_E=0
180
V
Collector-emitter breakdown voltage
V_(BR)CEO* I_C=1mA, I_B=0
160
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=10µA, I_C=0
6
V
Collector cut-off current
I_CBO
V_CB=120V, I_E=0
50
nA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
I_EBO
h_FE(1) ^*
h_FE(2) ^*
h_FE(3) ^*
V_CE(sat)1*
V_CE(sat)2*
V_BE(sat)1*
V_BE(sat)2*
V_EB=4V, I_C=0
V_CE=5V, I_C=1mA
V_CE=5V, I_C=10mA
V_CE=5V, I_C=50mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
50
nA
80
100
300
50
0.15
V
0.2
V
1
V
1
V
Transition frequency
f_T
V_CE=10V,I_C=10mA, f=100MHz 100
300 MHz
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
6
pF
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF h_FE
RANK
RANGE
L
100-200
H
200-300
High Diode Semiconductor
1