MMBT5401 Datasheet, PDF (1/4 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT5401
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● _{Complementary to MMBT5551}
● Ideal for Medium Power Amplification and Switching
SOT- 23
Marking:
● 2L
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-160
Collector-Emitter Voltage
-150
Emitter-Base Voltage
-5
Collector Current
-600
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
416
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V_(BR)CBO
V_(BR)CEO*
Emitter-base breakdown voltage
V_(BR)EBO
Collector cut-off current
I_CBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
I_EBO
h_FE(1) ^*
h_FE(2) ^*
h_FE(3) ^*
V_CE(sat)1*
V_CE(sat)2*
V_BE(sat)1*
V_BE(sat)2*
Transition frequency
f_T
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
I_C=-100µA, I_E=0
I_C=-1mA, I_B=0
I_E=-10µA, I_C=0
V_CB=-120V, I_E=0
V_EB=-4V, I_C=0
V_CE=-5V, I_C=-1mA
V_CE=-5V, I_C=-10mA
V_CE=-5V, I_C=-50mA
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
I_C=-10mA, I_B=-1mA
I_C=-50mA, I_B=-5mA
V_CE=-5V,I_C=-10mA, f=30MHz
Min Typ Max Unit
-160
V
-150
V
-5
V
-0.1 μA
-0.1 μA
80
100
300
50
-0.2
V
-0.5
V
-1
V
-1
V
100
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
L
100-200
H
200-300
High Diode Semiconductor
1