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| MMBT4403 Datasheet, PDF (1/4 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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MMBT4403
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
â Switching Transistor
SOT- 23
Marking:
â 2T
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-40
Collector-Emitter Voltage
-40
Emitter-Base Voltage
-5
Collector Current
-600
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
C
B
E
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)
VBE(satï¼
fT
td
tr
ts
tf
Test Conditions
IC=-100μA,IE=0
IC=-1mA,IB=0
IE=-100μA ,IC=0
VCB=-35V,IE=0
VCE=-35V, VBE=0.4V
VEB=-4V,IC=0
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-10V, IC=-20mA,f =100MHz
VCC=-30V, VBE(off)=-0.5V
IC=-150mA , IB1=-15mA
VCC=-30V, IC=-150mA
IB1=IB2=-15mA
Min Typ Max Unit
-40
V
-40
V
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
0
0
0
100
300
0
-0.4 V
-0.75 V
-0.95 V
-1.3 V
200
MHz
15
Qs
20
Qs
225
Qs
0
Qs
High Diode Semiconductor
1
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