MMBT4401 Datasheet, PDF (1/4 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT4401
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● Switching Transistor
SOT- 23
Marking:
● 2X
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
60
Collector-Emitter Voltage
40
Emitter-Base Voltage
6
Collector Current
600
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA,I_E=0
60
V
Collector-emitter breakdown voltage = V(BR)CEO IC=1mA,IB 0
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA ,I_C=0
Collector cut-off current
= I_CBO V_CB=50V,I_E 0
Collector cut-off current
I_CEX = VCE=35V, VEB 0.4V
Emitter cut-off current
= I_EBO V_EB=5V,I_C 0
40
V
6
V
0.1 μA
0.1 μA
0.1 μA
h_FE1= V_CE=1V, I_C 0.1mA
20
h_F= _E2 V_CE=1V, I_C 1mA
40
DC current gain
h_FE= ₃ V_CE=1V, I_C 10mA
80
h_FE4 = V_CE=1V, I_C 150mA
100
300
h_FE5 = V_CE=2V, I_C 500mA
40
Collector-emitter saturation voltage
= I_C=150mA,I_B 15mA
V_CE(sat)
= I_C=500mA,I_B 50mA
0.4
V
0.75 V
Base-emitter saturation voltage
V_BE(sat） ^{= IC=150mA,IB 15mA}
= I_C=500mA,I_B 50mA
0.95 V
1.2
V
Transition frequency
f_T
V_CE=10V, I_C=20mA,f =100MHz 250
MHz
Delay time
t_d
VCC=30V, VBE(off)=-2V
15
ns
Rise time
t_r
IC=150mA , IB1=15mA
20
ns
Storage time
t_s
VCC=30V, IC=150mA
225
ns
Fall time
t_f
IB1=IB2=15mA
60
ns
High Diode Semiconductor
1