MMBT3906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

MMBT3906
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● As complementary type, the NPN transistor
MMBT3904 is Recommended
● Epitaxial planar die construction
Marking:
● 2A
SOT- 23
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-40
Collector-Emitter Voltage
-40
Emitter-Base Voltage
-5
Collector Current
-200
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEX
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(sat)1
V_BE(sat)
f_T
td
tr
ts
tf
Test conditions
I_C=-10μA, I_E=0
I_C= -1mA, I_B=0
I_E= -10μA, I_C=0
V_CB= -40 V, I_E=0
V_CE=-30V, V_BE(off)=-3V
V_EB= -5V, I_C=0
V_CE=-1V, I_C= -10mA
V_CE= -1V, I_C=-50mA
V_CE= -1V, I_C=-100mA
I_C=-50mA, I_B=-5mA
I_C= -50mA, I_B=-5mA
V_CE=-20V,I_C=-10mA,f=100MHz
V_CC=-3V,V_BE=-0.5V
I_C=-10mA, I_B1=I_B2=-1mA
V_CC=-3V,I_C=-10mA
I_B1=I_B2=-1mA
MIN
-40
-40
-5
100
60
30
300
MAX
-100
-50
-100
300
UNIT
V
V
V
nA
nA
nA
-0.3
-0.95
35
35
225
75
V
V
MHz
nS
nS
nS
nS
CLASSIFICATION OF h_FE
HFE
RANK
RANGE
L
100–200
100-300
H
200–300
High Diode Semiconductor
1