MMBT3904M Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR

MMBT3904M
SOT-723 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● Complementary to MMBT3906M
● _{Small Package}
SOT- 7 23
Marking:
● 1N
C
E
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
60
Collector-Emitter Voltage
40
Emitter-Base Voltage
6
Collector Current
0.2
Collector Power Dissipation
0.1
Thermal Resistance From Junction To Ambient
1250
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
A
W
℃/W
℃
℃
B
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=10µA,IE=0
60
V
V(BR)CEO IC=1mA,IB=0
40
V
V(BR)EBO IE=10µA,IC=0
6
V
ICEX
VCE=30V,VEB(off)=3V
50
nA
IEBO
VEB=5V,IC=0
100
nA
hFE(1) VCE=1V,IC=0.1mA
40
hFE(2) VCE=1V,IC=1mA
70
hFE(3) VCE=1V,IC=10mA
100
300
hFE(4) VCE=1V,IC=50mA
60
VCE(sat)1 IC=10mA,IB=1mA
0.2
V
VCE(sat)2 IC=50mA,IB=5mA
0.3
V
VBE(sat)1 IC=10mA,IB=1mA
0.65
0.85
V
VBE(sat)2 IC=50mA,IB=5mA
0.95
V
fT
VCE=20V,IC=10mA,f=100MHz
300
MHz
Cob
VCB=5V,IE=0,f=1MHz
Cib
VEB=0.5V,IC=0,f=1MHz
4
pF
8
pF
NF
VCE=5V,IC=0.1mA,f=1MHz,R_S=1kΩ
5
dB
t_d
VCC=3V,VBE(off)=-0.5V,
t_r
IC=10mA,IB1=1mA
35
ns
35
ns
t_s
VCC=3V,IC=10mA
t_f
IB1=IB2=1mA
200
ns
50
ns
High Diode Semiconductor
1