MMBT2907A Datasheet, PDF (1/4 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTOR

MMBT2907A
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● Epitaxial planar die construction
● Complementary NPN Type available(MMBT2222A)
SOT- 23
Marking:
● 2F
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-600
250
500
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
Test conditions
Min
V_(BR)CBO I_C=-10μA,I_E=0
-60
V_(BR)CEO* I_C=-10mA,I_B=0
-60
V_(BR)EBO I_E=-10μA,I_C=0
-5
I_CBO
V_CB=-50V,I_E=0
I_EBO
V_EB=-3V, I_C =0
I_CEX
V_CE=-30 V, V_BE(off) =-0.5V
h_FE(1)
V_CE=-10V,I_C=-150mA
100
h_FE(2)
V_CE=-10V,I_C=-0.1mA
75
h_FE(3)
V_CE=-10V,I_C=-1mA
100
h_FE(4)
V_CE=-10V,I_C=-10mA
100
h_FE(5)
V_CE=-10V,I_C=-500mA
50
V_CE(sat)* I_C=-150mA,I_B=-15mA
V_CE(sat)* I_C=-500mA,I_B=-50mA
V_BE(sat)* I_C=-150mA,I_B=-15mA
V_BE(sat)* I_C=-500mA,I_B=-50mA
f_T
V_CE=-20V,I_C=-50mA,f=100MHz 200
t_d
t_r
V_CE=-30V,I_C=-150mA,_B1=-15mA
t_S
V_CE=-6V,I_C=-150mA,
t_f
I_B1=- I_B2=- 15mA
*Pulse test: t_p≤300μs, δ≤0.02.
Typ Max Unit
V
V
V
-20
nA
-10
nA
-50
nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
10
ns
25
ns
225
ns
60
ns
High Diode Semiconductor
1