MMBT2222 Datasheet, PDF (1/4 Pages) Samsung semiconductor – NPN (GENERAL PURPOSE TRANSISTOR)

MMBT2222
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
● Genernal Purpose Amplifier
SOT- 23
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
75
30
6
600
250
500
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min
Typ
Max
Collector-base breakdown voltage
V(BR)CBO IC=10µA, IE=0
75
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0
30
Emitter-base breakdown voltage
V(BR)EBO IE=10µA, IC=0
6
Collector cut-off current
ICBO
VCB=60V, IE=0
10
Collector cut-off current
ICEX
VCE=30V, VBE(off)=3V
10
Emitter cut-off current
IEBO
VEB=3V, IC=0
0.1
hFE(1)* VCE=10V, IC=150mA
100
300
DC current gain
hFE(2)* VCE=10V, IC=0.1mA
40
hFE(3)* VCE=10V, IC=500mA
42
Collector-emitter saturation voltage VCE(sat)1* IC=500mA, IB=50mA
1
Collector-emitter saturation voltage VCE(sat)2* IC=150mA, IB=15mA
0.3
Base-emitter saturation voltage
VBE(sat)* IC=500mA, IB=50mA
1.2
Transition frequency
fT
VCE=20V,IC=20mA, f=100MHz
300
Delay time
td
VCC=30V, VBE(off)=-0.5V IC=150mA,
10
Rise time
tr
IB1=15mA
25
Storage time
Fall time
ts
225
VCC=30V, IC=150mA, IB1= IB2=15mA
tf
60
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF h_FE
RANK
RANGE
MARKING
L
100–200
M1B
H
200–300
Unit
V
V
V
nA
nA
µA
V
V
V
MHz
ns
ns
ns
ns
High Diode Semiconductor
1