MJD127 Datasheet, PDF (1/3 Pages) Samsung semiconductor – PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

MJD127
TO-252-2L Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
Feature
z High DC Current Gain
z _{Electrically Similar to Popular TIP127}
z Built-in a Damper Diode at E-C
TO-252-2L
2
1
3
1. BASE 2. COLLECTOR 3. EMITTER
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
I_C
Emitter-Base Voltage
Collector Current -Continuous
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
Value
Unit
-100
V
-100
V
-5
V
-8
A
1.5
W
150
℃
-55-150
℃
Electrical Characteristics (T=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V_(BR)CBO I_C=-1mA,I_E=0
-100
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-30mA,I_B=0
-100
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10mA,I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-100V,I_E=0
Collector-emitter cut-off current
Emitter cut-off current
I_CEO
I_EBO
VCE=-50V,IB=0
V_EB=-5V,I_C=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
h_FE(1)
h_FE(2)
V_CE(sat)
*
1
V_CE(sat)
*
2
V_BE(sat) ^*
V_BE*
V_CE=-4V,I_C=-4A
V_CE=-4V,I_C=-8A
I_C=-4A,I_B=-16mA
I_C=-8A,I_B=-80mA
I_C=-8A,I_B=-80mA
V_CE=-4V,I_C=-4A
1000
100
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=0.1MHz
*Pulse Test: Pulse Width≤380µs, Duty Cycle≤2%
Max Unit
V
V
V
-10
µA
-10
µA
-2
mA
12000
-2
V
-4
V
-4.5
V
-2.8
V
300
pF
High Diode Semiconductor
1