MJD122 Datasheet, PDF (1/3 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

MJD122
TO-252-2L Plastic-Encapsulate Transistors
TRANSISTOR（NPN）
Feature
z _{High DC Current Gain}
z _{Electrically Similar to Popular TIP122}
z Built-in a Damper Diode at E-C
TO-252-2L
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
100
V
100
V
5
V
8
A
1.5
W
150
℃
-55-150
℃
2
1
3
1. BASE 2. COLLECTOR 3. EMITTER
Electrical Characteristics (T=25℃ Unless otherwise specified）
Parameter
Symbol Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V_(BR)CBO Ic=1mA,I_E=0
100
V
Collector-emitter breakdown voltage
V_(BR)CEO Ic=30mA,I_B=0
100
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=3mA,I_C=0
5
V
Collector cut-off current
Collector-emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
I_CBO
V_CB=100V,I_E=0
I_CEO
V_CE=50V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE(2) V_CE=4V,I_C=4A
h_FE(3) V_CE=4V,I_C=8A
V_CE(sat（_{) 1}） I_C=4A,I_B=16mA
V_CE(sat（_{) 2}） I_C=8A,I_B=80mA
V_BE(sat) I_C=8A,I_B=80mA
1000
100
10
µA
10
µA
2
mA
12000
2
V
4
V
4.5
V
Base-emitter voltage*
Collector output capacitance
V_BE
V_CE=4V,I_C=4A
C_ob
V_CB=10V,I_E=0,f=0.1MHz
2.8
V
200
pF
High Diode Semiconductor
1