MBRD20150CT-TO-252 Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-252-2L Plastic-Encapsulate Diodes

MBRD20150CT
HD TO103
TO-252-2L Plastic-Encapsulate Diodes
Schottky Rectifier
Features
●Io
20A
●VRRM
150V
●High surge current capability
Applications
● Rectifier
Marking
● MBRD20150CT
TO-252-2L
2
1
3
Item
Symbol Unit
Test Conditions
Repetitive Peak Reverse Voltage
Average Rectified Output Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
V_RRM
I_o
I_FSM
T_J
T_STG
V
A
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
Peak Forward Voltage
Peak Reverse Current
Thermal
Resistance(Typical)
V_F
I_RRM1
I_RRM2
R_θJ-C
V
mA
℃/W
I_F =10.0A
V_RM=V_RRM
Ta =25℃
Ta =125℃
Between junction and case
Typical total capacitance
C_tot
pF
VR=4V,f=1MHZ
MBRD20150CT
150
20.0
180
-55~+150
-55 ~ +150
MBRD20150CT
0.86
0.05
1.5
2.0
100
High Diode Semiconductor
1