MBR3035-F-CT Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-220 Plastic-Encapsulate Diodes

MBR3035(F)CT THRU MBR30200(F)CT _{HD TO122}
TO-220 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
●Io
30A
●VRRM
35V-200V
●High surge current capability
TO- 220 AB
ITO- 220 AB
Applications
● Rectifier
Marking
● MBR30XX(F)CT
XX ^: From 35 To 200
1
23
PIN 1
PIN 3
1
2
3
PIN 2
CASE
Item
Symbol Unit
Test Conditions
35
Repetitive Peak Reverse Voltage VRRM
V
35
Average Rectified Output Current
I_o
A
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_FSM
T_J
T_STG
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
MBR30 -(F)CT
45 50 60 90 100 150 200
45 50 60 90 100 150 200
30
200
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
MBR30 -(F)CT
35 45 50 60 90 100 150 200
Peak Forward Voltage
Peak Reverse Current
Thermal
Resistance(Typical) (Note1)
V_F
I_RRM1
I_RRM2
R_θJ-A
V
mA
℃/W
I_F =15.0A
V_RM=V_RRM
Ta =25℃
Ta =125℃
0.8
0.85 0.95
0.1
1.5
30
Typical Junction
Capacitance(Note2)
Cj
pF
650
NOTE1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
NOTE2. Leads maintained at ambient temperature at a distance of 9.5mm from the case
High Diode Semiconductor
1