MBR1035-F Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-220 Plastic-Encapsulate Diodes

MBR1035(F) THRU MBR10200(F)
TO-220 Plastic-Encapsulate Diodes
Schottky Rectifier
HD TO88
Features
●Io
10A
●VRRM
35V-200V
●High surge current capability
TO- 220 AC
ITO- 220 AC
Applications
● Rectifier
Marking
● MBR10XX(F)
XX ^: From 35 To 200
12
1
2
1
2
Item
Symbol Unit
Test Conditions
35
Repetitive Peak Reverse Voltage VRRM
V
35
Average Rectified Output Current
I_o
A
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_FSM
T_J
T_STG
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
MBR10-(F)
45 50 60 90 100 150 200
45 50 60 90 100 150 200
10.0
120
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
35
MBR10-(F)
45 50 60 90 100 150 200
Peak Forward Voltage
Peak Reverse Current
Thermal
Resistance(Typical) (Note1)
V_F
I_RRM1
I_RRM2
R_θJ-A
V
I_F =10.0A
0.7
Ta =25℃
mA
V_RM=V_RRM
Ta =125℃
℃/W
0.8
0.3
1.5
0.85
30
1.05
Typical Junction
Capacitance(Note2)
Cj
pF
150
NOTE1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
NOTE2. Leads maintained at ambient temperature at a distance of 9.5mm from the case
High Diode Semiconductor
1