MBR10150L-F-CT Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – TO-220 Plastic-Encapsulate Diodes

MBR10150L(F)CT
TO-220 Plastic-Encapsulate Diodes
Schottky Rectifier
HD TO102
Features
●Io
10A
●VRRM
150V
●High surge current capability
●_{Low Vf}
TO- 220 AB
ITO- 220 AB
Applications
● Rectifier
Marking
● MBR10150L(F)CT
1
23
PIN 1
PIN 3
1
2
3
PIN 2
CASE
Item
Symbol Unit
Test Conditions
Repetitive Peak Reverse Voltage

Average Rectified Output Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
V_RRM
I_o
I_FSM
T_J
T_STG
V
A ^{60HZ Half-sine wave, Resistance}
load, Tc(Fig.1)
A
60Hz Half-sine wave ,1 cycle ,
Ta =25ć
ć
ć
MBR10150L(F)CT
150
10.0
120
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25ć Unless otherwise specified˅
Item
Symbol
Unit
Test Condition
Peak Forward Voltage
Peak Reverse Current
Thermal
Resistance(Typical)

V_F
I_RRM1
I_RRM2
R_șJ-C
V
mA
ć/W
I_F =5.0A
V_RM=V_RRM
Ta =25ć
Ta =125ć
Between junction and case
Notes:
Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate
MBR10150L(F)CT
0.8
0.1
1.5
2.0¹⁾
High Diode Semiconductor
1