LLDB3 Datasheet, PDF (1/4 Pages) Formosa MS – DIAC

LLDB 3 / LLDB 4
MINI MELF Glass-Encapsulate Diodes
Silicon bidirectional diac
Features
●VBO
28V-45V
MINI MELF(SOD- 8 0 / LL- 3 4 )
PARAMETERS
Power Dissipation on Printed
Cir cuit(L=10mm)
TA=50℃
Repetitive Peak on-state
Current
Tp=10uS
f=100HZ
Storage and Operating Juntion Temperature
SYMBOL
Pc
ITRM
TSTG/TJ
VALUE
LLDB3 / LLDB4
150
2.0
-40 to +125
UNITS
mW
A
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
PAPRAMETERS
SYMBOLS
TEST CONDITIONS
Breakover Voltage*
Breakover Voltage Symmetry
Dynamic Breakover Voltage
Output Voltage*
Breakover Current*
Rise Time*
VBO
1+VBOI-
1-VBOI
1 ±△V1
VO
IBO
tr
Min
C=22nf**
See Diagram 1
Typ
Max
C=22nf**
Max
See Diagram 1
△I=(IBO to IF=10mA)
Min
See FIG 1
See FIG 2
Min
C=22nf**
Max
See FIG 3
Typ
Leakage Current*
IB
IB=0.5 VBO MAX
Max
See FIG 3
NOTE:* Electrical characteristics applicable in both forward and reverse directions.
** Connected in parallel with the devices.
VALUE
UNITS
LLDB3 LLDB4
28
35
32
45
V
36
45
±3
V
5
V
5
V
100
uA
1.5
uS
10
uA
High Diode Semiconductor
1