KBP005 Datasheet, PDF (1/3 Pages) Shanghai Sunrise Electronics – SINGLE PHASE SILICON BRIDGE RECTIFIER

KBP005 THRU KBP10
KBP Plastic-Encapsulate Bridge Rectifier
Features
K BP
●Io
1.5A
●VRRM
50V-1000V
●High surge current capability
●Polarity: Color band denotes cathode
Applications
● _{General purpose 1 phase Bridge}
rectifier applications
Marking
● K BPXX
XX ^: From 005 To 10
Item
Symbol Unit
Repetitive Peak Reverse Voltage _VRRM
V
Conditions
KBP
005 01 02 04 06 07 08 10
50 100 200 400 600 700 800 1000
Average Rectified Output
Current
IO
A 60H_Z sine wave, R- load, T_a=30℃
1.5
Surge(Non-repetitive)Forward
Current
IFSM
A
60HZ sine wave, 1 cycle, Ta=25℃
50
I²t
A²s
Current Squared Time
1ms≤t ＜ 8.3ms T_j=25℃,Rating of
26.5
per diode
Storage Temperature
Junction Temperature
Tstg
℃
Tj
℃
-55 ~+150
-55 ~+150
Electrical Characteristics（T_a=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Max
Peak Forward Voltage
VFM
V
IFM=1.5A, Pulse measurement, Rating of per diode
1.1
Peak Reverse Current
IRRM
μA
VRM=VRRM , Pulse measurement, Rating of per diode
10
RθJ-A
Between junction and ambient
20
Thermal Resistance⁽¹⁾
℃ /W
RθJ-L
Between junction and lead
11
（Notes）:
（1）Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47×0.47”(12×12mm) copper
pads
High Diode Semiconductor
1