HER501G Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 5.0 AMP. Glass Passivated High Efficient Rectifiers

HER501G THRU HER508G
DO-27 Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●Io
5.0A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● HER50XG
X:From 1 to 8
DO-27
HD ZC95
Item
I
Maximum RMS Voltage
Symbol Unit
HER50
1G 2G 3G 4G 5G 6G 7G 8G
300
V_RMS
I_F(AV)
V
35 70 140 210 280 420 560 700
60Hz Half-sine wave, Resistance
load, Ta=50℃
5
I_FSM
60Hz Half-sine wave,1 cycle,
Ta=25℃
200
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Symbol Unit
Peak Forward Voltage
Peak Reverse Current
Reverse Recovery time
Thermal
Resistance(Typical)
V_FM
I_RRM1
I_RRM2
trr
R_θJ-A
R_θJ-L
V
μA
ns
℃/W
Test Condition
1G
I_FM=5.0A
V_RM=V_RRM
Ta=25℃
Ta=125℃
I_F=0.5A I_R=1A
I_RR=0.25A
Between junction and ambient
Between junction and lead
HER50
2G 3G 4G 5G 6G
1.0
1.3
10
150
50
7G 8G
1.7
75
20
10
High Diode Semiconductor
1