HDK3401A Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23-3L Plastic-Enca p sulate MOSFET

HDK3401A
SOT-23-3L Plastic-Encapsulate MOSFET
P -Channel MOSFET
Product Summary
V_(BR)DSS
-30V
R_DS(on)MAX
60 mΩ@-10V
70 mΩ@-4.5V
85 mΩ@-2.5V
I_D
-4.2A
SOT- 23 - 3 L
D
Features
● _{High dense cell design for extremely low RDS(ON)}
● Exceptional on-resistance and maximum DC current capability
S
G
Applications
● _{Load/Power Switching}
● Interfacing Switching
Marking:
● _R1A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_STG
Value
-30
±12
-4.2
450
313
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
High Diode Semiconductor
1