HDK3400A Datasheet, PDF (1/5 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23-3L Plastic-Enca p sulate MOSFET

HDK3400A
SOT-23-3L Plastic-Encapsulate MOSFET
N -Channel MOSFET
Product Summary
V_(BR)DSS
30 V
R_DS(on)MAX
32mΩ@^10V
38mΩ@4.5V
45mΩ@2.5V
I_D
5.8A
SOT- 23 - 3 L
D
Features
● _{High dense cell design for extremely low RDS(ON)}
● Exceptional on-resistance and maximum DC current capability
S
G
Applications
● _{Load/Power Switching}
● Interfacing Switching
Marking:
● _R0A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
30
±12
5.8
30
450
313
150
-55~+150
Unit
V
V
A
A
mW
℃/W
℃
℃
High Diode Semiconductor
1