GS3AC Datasheet, PDF (1/4 Pages) SUNMATE electronic Co., LTD – SURFACE MOUNT SILICON RECTIFIER DIODES

GS3A THRU GS3M
SMC Plastic-Encapsulate Diodes
General P urpose Rectifier
Features
●Io
3A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● GS3X
X ^: From A To M
SMC
HD CK 84
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
Symbol
VRRM
V_RMS
IF(AV)
IFSM
TJ
TSTG
Unit
Test Conditions
A
V
50
V
35
A
60HZ Half-sine wave, Resistance
load, TL=110℃
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
GS3
BDGJ KM
100 200 400 600 800 1000
70 140 280 420 560 700
3
100
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
GS3
ABDGJ KM
Peak Forward Voltage
V_F
V
I_F =3.0A
1.0
Peak Reverse Current
I_RRM1
I_RRM2
Ta =25℃
μA
VRM=VRRM
Ta =125℃
5.0
100
Thermal
Resistance(Typical)
R_θJ-A
R_θJ-L
℃/W
Between junction and ambient
Between junction and terminal
47¹⁾
13¹⁾
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper
pad areas
High Diode Semiconductor
1