ES3ABF Datasheet, PDF (1/4 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER

ES3ABF THRU ES3JBF
SMBF Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●Io
3A
●VRRM
50V-600V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● ES3ABF-ES3JBF : ES3AB-ES3JB
SMBF
HD BF80
Item
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
Symbol Unit
VRRM
V
VRMS
V
Test Conditions
ES3
ABF BBF CBF DBF FBF GBF HBF JBF
50 100 150 200 300 400 500 600
35 70 105 140 210 280 350 420
IF(AV)
A
60HZ Half-sine wave, Resistance
load, TL=100℃
3.0
IFSM
TJ
TSTG
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
100
-55~+150
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
ES3
ABF BBFCBF DBF FBF GBF HBF JBF
Peak Forward Voltage
V_F
V
I_F =3.0A
0.95
1.25
1.7
Maximum reverse recovery
time
trr
ns
IF=0.5A,IR=1.0A,Irr=0.25A
35
Peak Reverse Current
I_RRM1
I_RRM2
μA
VRM=VRRM
Ta =25℃
Ta =100℃
10
500
Thermal
Resistance(Typical)
R_θJ-A
R_θJ-L
℃/W
Between junction and ambient
Between junction and terminal
47¹⁾
12¹⁾
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1