ES1AL-28F-29 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOD 123FL Plastic-Encapsulate Diodes

ES1AL THRU ES1JL
SOD1 23FL Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●Io
1A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● ES1AL-ES1DL : ESL
● _{ES1EL-ES1GL : ESM}
● ES1JL : ESH
SOD-1 23FL
HD FL 46
Item
Symbol Unit
Repetitive Peak Reverse Voltage VRRM
V
Maximum RMS Voltage
V_RMS
Test Conditions
ES1
AL BL CL DL EL GL JL
50 100 150 200 300 400 600
35 70 105 140 210 280 420
Average Forward Current
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_F(AV)
I_FSM
T_J
T_STG
A 60HZ Half-sine wave, Resistance
load, T_L=120℃
A ^{60Hz Half-sine wave ,1 cycle ,}
Ta =25℃
℃
℃
1.0
25
-55~+150
-55 ~ +150
Electrical Characteristics (T=25℃ Unless otherwise specified）
Item
Symbol _Unit
Test Condition
ES1
AL BL CL DL EL GL JL
Peak Forward Voltage
V_F
V
I_F =1.0A
0.95
1.25
1.70
Maximum reverse recovery
time
t_rr
ns
I_F=0.5A,I_R=1.0A,I_rr=0.25A
35
Peak Reverse Current
I_RRM1
μA
I
V_RM=V_RRM
Ta =25℃
Ta =100℃
5
100
Thermal
Resistance(Typical)
R_θJ-A
R_θJ-L
℃/W
Between junction and ambient
Between junction and terminal
85¹⁾
35¹⁾
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1