ER1A-28J-29 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SMAJ Plastic-Encapsulate Diodes

ER1A THRU ER1J
SMAJ Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●Io
1A
●VRRM
50V-600V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● ER1X
X ^: From A To J
SMAJ
HD AJ 42
Item
Symbol Unit
Repetitive Peak Reverse Voltage _VRRM
V
Maximum RMS Voltage
V _RMS
V
Test Conditions
ER1
ABCD EGH J
50 100 150 200 300 400 500 600
35 70 105 140 210 280 350 420
Average Forward Current
I_F(AV)
A ^{60HZ Half-sine wave, Resistance}
load, T_a=75 ℃
1.0
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
I_FSM
T_J
T_STG
A
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
℃
℃
30
-55~+125
-55 ~ +150
Electrical Characteristics (T=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
A
Peak Forward Voltage
V_F
V
I_F =1.0A
BC
0.95
ER1
D EG
1.25
HJ
1.70
Maximum reverse recovery
time
t_rr
ns
I_F=0.5A,I_R=1.0A,I_rr=0.25A
35
Peak Reverse Current
I_RRM1
μA
I
V_RM=V_RRM
Ta =25℃
Ta =100℃
5
100
Thermal
Resistance(Typical)
R_θJ-A
℃/W
Between junction and ambient
55¹⁾
R_θJ-L
Between junction and terminal
25¹⁾
Typical junction capacitance
Cj
pF
Measured at 1MHZ and Applied
Reverse Voltage of 4.0 V.D.C.
15
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1