DBF2005 Datasheet, PDF (1/3 Pages) Jiangsu High diode Semiconductor Co., Ltd – DBF Plastic-Encapsulate Bridge Rectifier

DBF20005 THRU DBF2010
HD DB60
DBF Plastic-Encapsulate Bridge Rectifier
Features
●Io
2A
●VRRM
50V-1000V
DBF
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● _{General purpose 1 phase Bridge}
rectifier applications
Marking
● DBF20XX
XX : From 05 To 10
Item
Symbol Unit
Repetitive Peak Reverse
Voltage
V_RRM
V
Conditions
DBF20
005 01 02 04 06 08 10
50 100 200 400 600 800 1000
Average Rectified Output
Current
I_O
A
60Hz sine wave, R-load, Tc=110℃
2.0
Surge(Non-
repetitive)Forward
I_FSM
A
60H_Z sine wave, 1 cycle, T_j=25℃
75
Current
Current Squared Time
Storage Temperature
I²t
A²S ^{1ms≤t<8.3ms Tj=25℃，Rating of per}
diode
T_stg
℃
23
-55 ~+150
Junction Temperature
T_j
℃
-55 ~+150
Electrical Characteristics（T_a=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Max
Peak Forward Voltage
Peak Reverse Current
Thermal Resistance
V_FM
V
I_FM=1.0A, Pulse measurement, Rating of per diode
I_{RRM μA} V_RM=V_RRM , Pulse measurement, Rating of per diode
R_θJ-A
Between junction and ambient
R_θJ-L ℃/W
Between junction and lead
R_θJ-C
Between junction and case
Tj=25℃
Tj=125℃
1.02
5
100
55
15
10
High Diode Semiconductor
1