DB3-DO-35 Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – DO-35 Glass-Encapsulate Diodes

DB3
DO-35 Glass-Encapsulate Diodes
Small Signal Fast Switching Diodes
Features
●VBO 28V-36V
DO-35
Symbols
Parameters
PC
ITRM
TSTG/TJ
Power Disspation on printed
Circuit(L=10mm)
Repetitive Peak on-state Current
TA=50℃
tp=10us
f=100Hz
Storage and Operating Junction Temperature
Value
150
2.0
-40 to+125
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Symbols
Parameters
Test Condition
VBO Break Voltage(Note 2)
Min
C=22Nf(Note2)
See diagram1
Typ
Max
I+VBOI-
I-VBOI
Breakover Voltage Symmetry
C=22Nf(Note2)
See diagram1
Max
I±△VI
Dynamic Breakover Voltage(Note1)
△I=(IBO to IF=10Ma)
See diagram1
Min
VO
Output Voltage (Note1)
See diagram2
Min
IBO Breakover Current (Note1)
C=22Nf(Note2)
Max
Tr
Rise Time(Note1)
IB
Leakage Current(Note1)
See diagram3
Typ
VB=0.5 VBO max
See diagram1
Max
Value
28
32
36
3
5
5
100
1.5
10
Units
mW
A
℃
Units
V
V
V
V
uA
uS
uA
High Diode Semiconductor
1