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| C1815 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN | |||
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C1815
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
Features
â High voltage and high current
â Excellent hFE Linearity
â Low niose
Marking:
â HF
SOT- 23
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
60
Collector-Emitter Voltage
50
Emitter-Base Voltage
5
Collector Current
150
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
C
B
E
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC= 100uA, IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE= = 100uA, IC 0
5
Collector cut-off current
ICBO
VCB=60V, IE=0
Collector cut-off current
ICEO
VCE=50V, IB=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
Collector-emitter saturation voltage
hFE
VCE= 6V, IC= 2mA
130
VCE(sat)
IC=100mA, IB= 10mA
Base-emitter saturation voltage
Transition frequency
VBE(sat)
IC=100mA, IB= 10mA
VCE=10V, IC= 1mA,
fT
80
f=30MHz
Typ
Max Unit
V
V
V
0.1
uA
0.1
uA
0.1
uA
400
0.25
V
1
V
MHz
CLASSIFICATION OF hFE
Rank
Range
L
130-200
H
200-400
High Diode Semiconductor
1
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