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| BC817B Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors | |||
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%& B
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( NP N )
HD ST0.35
Features
â For general AF applications
â High collector current
â High current gain
â Low collector-emitter saturation voltage
â Complementary types: BC807 (PNP)
SOT- 23
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
50
Collector-Emitter Voltage
45
Emitter-Base Voltage
5
Collector Current
0.35
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
A
mW
â/W
â
â
C
B
E
Electrical Characteristics (T=25â Unless otherwise specifiedï¼
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VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
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IC= 10μA, IE=0
IC= 10mA, IB=0
IE= 1μA, IC=0
VCB= 45 V , IE=0
VEB= 4V, IC=0
VCE= 1V, IC= 100mA
VCE= 1V, IC= 500mA
IC= 500mA, IB= 50mA
IC= 500mA, IB= 50mA
VCE= 1 V, IC= 500mA
VCB=10V ,f=1MHz
VCE= 5 V, IC= 10mA
f=100MHz
0in
50
45
5
100
40
100
Typ 0ax
Unit
V
V
V
0.1
μA
0.1
μA
600
0.7
V
1.2
V
1.2
V
10
pF
MHz
CLASSIFICATION OF hFE
5DQN
5DQJH
0DUNLQJ
BC817B-16
$
BC817B-25
%
High Diode Semiconductor
BC817B-40
&
1
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