BC807B Datasheet, PDF (1/4 Pages) Jiangsu High diode Semiconductor Co., Ltd – SOT-23 Plastic-Encapsulate Transistors

BC807B
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
HD ST0.35
Features
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BC817 (NPN)
SOT- 23
Symbol
V_CBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-50
Collector-Emitter Voltage
-45
Emitter-Base Voltage
-5
Collector Current
Collector Power Dissipation
-0.35
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
          3DUDPHWHU
 6\PERO
&ROOHFWRUEDVHEUHDNGRZQYROWDJH
&ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH
(PLWWHUEDVHEUHDNGRZQYROWDJH
&ROOHFWRUFXWRIIFXUUHQW
(PLWWHUFXWRIIFXUUHQW
'&FXUUHQWJDLQ                       
&ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH
%DVHHPLWWHUVDWXUDWLRQYROWDJH
7UDQVLWLRQIUHTXHQF\
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
  7HVW FRQGLWLRQV
I_C= -10μA, I_E=0
I_C= -10mA, I_B =0
I_E= -1μA, I_C=0
V_CB = -45 V , I_E=0
V_EB= -4V, I_C=0
V_CE= -1V, I_C=-100mA
V_CE=-1V, I_C=-500mA
I_C=-500mA, I_B= 50mA
I_C=-500mA, I_B=-50mA
V_CE=-5 V, I_C=-10mA
f=100MHz
 ⁰ⁱⁿ
-50
-45
-5
100
40
100
Typ_{ } 0ax
Unit
V
V
V
0.1
μA
0.1
μA
600
0.7
V
1.2
V
MHz
CLASSIFICATION OF h_FE
Rank
Range
Marking
BC807B-16
100-250
5A
BC807B-25
160-400
5B
BC807B-40
250-600
5C
High Diode Semiconductor
1