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BC807 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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BC807
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
â High collector current
â High current gain
â Low collector-emitter saturation voltage
â Complementary types: BC817 (NPN)
SOT- 23
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-50
Collector-Emitter Voltage
-45
Emitter-Base Voltage
-5
Collector Current
-0.5
Collector Power Dissipation
300
Thermal Resistance From Junction To Ambient
417
Junction Temperature
150
Storage Temperature
-55ï½+150
Unit
V
V
V
A
mW
â/W
â
â
C
B
E
Electrical Characteristics (Ta=25â Unless otherwise specifiedï¼
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VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
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IC= -10μA, IE=0
IC= -10mA, IB =0
IE= -1μA, IC=0
VCB = -45 V , IE=0
VEB= -4V, IC=0
VCE= -1V, IC=-100mA
VCE=-1V, IC=-500mA
IC=-500mA, IB= 50mA
IC=-500mA, IB=-50mA
VCE=-5 V, IC=-10mA
f=100MHz
0in
-50
-45
-5
100
40
100
Typ 0ax
Unit
V
V
V
0.1
μA
0.1
μA
600
0.7
V
1.2
V
MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
BC807-16
100-250
5A
BC807-25
160-400
5B
BC807-40
250-600
5C
High Diode Semiconductor
1
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