BAW56 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

BAW56/BAV70/BAV99
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● _{Fast Switching Speed}
● _{For General Purpose Switching Applications}
● _{High Conductance}
SOT- 23
3
Marking:
BA W56
BAV70
BAV99
2
1
MARKING:A1
MARKING A4
MARKING:A7
Parameter
Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VR
IF
IFSM
PD
RθJA
TJ
TSTG
Limit
70
200
2.0
225
556
150
-55~+150
Unit
V
mA
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol Min Typ Max Unit
Reverse breakdown voltage
V_R
70
V
V_F1
0.715
V
Forward voltage
Reverse current
V_F2
0.855 _V
V_F3
1
V
V_F4
1.25
V
I_R
2.5
μA
Capacitance between terminals
C_T
1.5
pF
Reverse recovery time
t _rr
6
ns
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=70V
V_R=0,f=1MHz
I_F = I_R = 10mA,
Irr= 0.1 x I_R, R_L = 100Ω
High Diode Semiconductor
1