BAV99W Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode

BAV99W
SOT-323 Plastic-Encapsulate Diodes
Switching Diodes
Features
● _{For high-speed switching applications}
● Connected in series
SOT- 3 23
3
Marking
●_{K J G}
2
1
Parameter
Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
Limit
VR
75
IF 
IFSM
2.0
PD 
RθJA
625
T_J
150
TSTG
-55~+150
Unit
V
mA
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Reverse breakdown voltage
V_(BR)
I_R= 1μA
Reverse voltage leakage current
I_R1
V_R=75V
I_R2
V_R=25V
Forward voltage
Diode capacitance
Reverse recovery time
I_F=1mA
V_F
I_F=10mA
I_F=50mA
I_F=150mA
C_D
V_R=0 f=1MHz
t _rr
I_F=I_R=10mA
I_rr=0.1×I_R,R_L=100Ω
Min
Max
5
2.5
25
715
855
1000
1250

4
High Diode Semiconductor
Unit
V
μA
nA
mV
pF
ns
1