BAS70 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70/-04/-05/-06
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● Low turn-on voltage
● Fast switching
● Also available in lead free version
SOT- 23
3
Marking:
BA S 7 0
BA S 7 0-06
BA S 7 0-05
BA S 7 0-04
2
1
MARKING: 73
MARKING:76
MARKING :75
MARKING:74
Symbol
V_R
I_F
I_FSM
P_D
RθJA
T_J
T_stg
Parameter
DC Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Value
70
70
100
200
500
125
-55~+150
Unit
V
mA
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min
Max
Unit
Reverse breakdown voltage
V_(BR)
I_R= 10µA
70
V
Reverse voltage leakag e current
Forward voltage
Diode cap acitance
Reveres recovery time
I_R
V_R=50V
V_F
I_F=1mA
I_F=15mA
C_D
V_R=0V f=1MHz
I_F=I_R=10mA,I_rr=0.1xI_R,
t_rr
R_L=100Ω
100
nA
410
mV
1000
2
pF
5
ns
High Diode Semiconductor
1