BAS19 Datasheet, PDF (1/4 Pages) NXP Semiconductors – General purpose diodes

BAS19/BAS20
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● Fast Switching Speed
● Surface Mount Package Ideally Suited for Automatic Insertion
● For General Purpose Switching Applications
● _{High Conductance}
Applications
● Extreme fast switches
SOT- 23
3
2
1
Marking:
● BAS19 : JP
BAS20 : JR
1
3
2
Symbol
VRRM
VRWM
IO
IFSM
Pd
RθJA
TJ
Tstg
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction temperature
Storage Temperature
BAS19
BAS20
120
200
100
150
200
2.5
250
500
150
-55 ~ +150
Unit
V
V
mA
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Reverse breakdown voltage
Reverse current
Forward voltage
Diodes capacitance
Reveres recovery time
BAS19
BAS20
BAS19
BAS20
Symbol
V_(BR)
I_R
V_F
C_D
t_rr
Test Condition
IR=100μA
VR=100V
VR=150V
IF=100mA
IF=200mA
VR=0V, f=1MHz
IF=IR=30mA,Irr=0.1*IR
Min Typ Max
Unit
120
V
200
0.1
μA
1
V
1.25
V
5
pF
50
ns
High Diode Semiconductor
1