BAS16 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Small Signal Diode

BAS16
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● _{Fast Switching Speed}
● For General Purpose Switching Applications
● High Conductance
SOT- 23
3
Applications
● Extreme fast switches
2
1
Marking:
● A6
1
3
2
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
Pd
R_θJA
T_j
T_STG
Limit
100
75
53
300
150
2.0
225
556
150
-55~+150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V_(BR)
I_R= 100µA
75
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
I_R
V_R=75V
I_F=1mA
V_F
I_F=10mA
I_F=50mA
I_F=150mA
C_D
V_R=0, f=1MHz
I_F=I_R=10mA,I_rr=0.1×I_R,
t_rr
R_L=100Ω
High Diode Semiconductor
Unit
V
V
V
mA
mA
A
mW
℃/W
℃
℃
Max
1
0.715
0.855
1
1.25
2
6
Unit
V
µA
V
pF
ns
1