BAS116 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Low-leakage diode

BAS116
SOT-23 Plastic-Encapsulate Diodes
Switching Diodes
Features
● Low leakage current applications
● ^{Medium speed switching times}
SOT- 23
3
Applications
● Extreme fast switches
Marking:
● JV
2
1
1
3
2
Parameter
Symbol
Limit
Unit
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
V_RRM
V_RWM
75
V
V_R
I_FM
200
mA
Non-Repetitive Peak Forward Surge Current @t=8.3ms
I_FSM
2.0
A
Power Dissipation
P_D
225
mW
Junction Temperature
T_J
150
℃
Storage Temperature
T_STG
-55~+150
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Symbol
V _(BR)
V_F1
V_F2
V_F3
V_F4
I_R
C_tot
Min
75
Typ Max Unit
V
0.9
V
1
V
1.1
V
1.25
V
5
nA
2
pF
Reverse recovery time
t_rr
3
μs
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=50mA
I_F=150mA
V_R=75V
V_R=0V,f=1MHz
I_F=I_R=10mA,I_rr=0.1×I_{R ,}
R_L=100Ω
High Diode Semiconductor
1